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Accurate statistical process variation analysis for 0.25-μm CMOS with advanced TCAD methodology

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5 Author(s)
Sato, H. ; Device Dev. Center, Hitachi Ltd., Tokyo, Japan ; Kunitomo, H. ; Tsuneno, K. ; Mori, K.
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Effects of statistical process variation on the 0.25-μm CMOS performance have been accurately characterized by using a new calibrated TCAD methodology. To conduct the variation analysis, a series of TCAD simulations was conducted on the basis of DoE (design of experiments) with optimum variable transformations, which resulted in RSF's (response surface functions) for threshold voltage (Vth) and saturation drain current (Ids). A new global calibration of the RSF model based on experimental data gives excellent accuracy within 0.02 V error in Vth and 3% error in Ids. Using calibrated RSF, statistical process variation effects on the device characteristics have been quantitatively evaluated for each process recipe. It is found that variation of the gate-oxide formation process shows the most significant effect on the NMOS ΔIds in the production process. Furthermore we have designed an optimized 0.25-μm CMOS process and device on the basis of the RSF and also predicted the process variation effects on the device performance. It is shown that the Vth and Ids variations of the 0.25-μm CMOS exhibit less than 10% Ids variation in the production level process, which is similar to the value of 0.35-μm CMOS experimental data. Additional TCAD simulations for MOS model parameter generation of the 0.25-μm device was also conducted to allow circuit-designers to use predictive worst case circuit design parameters before experimental chip fabrication

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:11 ,  Issue: 4 )