By Topic

An improved Mo/n-GaAs contact by interposition of a thin Pd layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
C. Y. Nee ; Inst. of Electr. & Comput. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; C. -Y. Chang ; T. F. Cheng ; T. S. Huang

The idea of limited reaction has been used to solve the adhesion and stability problems of Mo/n-GaAs and Pd/n-GaAs contacts. The structural and electrical properties of Mo/Pd/n-GaAs with different thicknesses of Pd layer, annealed from 300 degrees C to 500 degrees C for 30 min, were investigated. Adhesion of Mo to GaAs has been improved with the interposition of a thin Pd layer. With increasing Pd thickness, wider temperature ranges were achieved in which the contact showed rectifying Schottky behavior. The Schottky barrier heights were nearly constant below 300 degrees C and then dropped sharply at 450 degrees C, except for Mo(2000 AA)/Pd(200 AA)/n-GaAs diodes. The ideality factors converged to nearly unity at 300 degrees C and then increased sharply from 300 to 500 degrees C, except for Mo(2000 AA)/Pd(200 AA)/n-GaAs diodes, which maintained a nearly constant value of 1.34 from 400 to 500 degrees C.<>

Published in:

IEEE Electron Device Letters  (Volume:9 ,  Issue: 6 )