Silicon-compatible resonant plasma-wave transistor with 2D silicene channel for high-performance terahertz electromagnetic wave emitters

In this work, we propose a novel Si-compatible resonant plasma-wave transistor (R-PWT) with 2D silicene channel for a high-performance terahertz (THz) electromagnetic (EM) wave emitter. High resonance quality i.e. narrow emission spectra can be obtained by high mobility of 2D silicene channel (μ= 2×10
⁵
cm
²
V
^-1·
s
^-1
) since nanoscale channel length L can be much smaller than the maximum channel length L
_max
= 1395 nm even under relatively low gate voltage.