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Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures

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4 Author(s)
Floyd, P.D. ; Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA ; Chua, C.L. ; Treat, D.W. ; Bour, D.P.

In this letter, we use wafer fusion to integrate AlGaInAs quantum-well (QW) laser heterostructures to GaN laser diode and light-emitting diode (LED) structures. After fusion of the laser heterostructure to the GaN layers, AlGaInAs QW lasers are fabricated and characterized. Lasers of 15/spl times/510 /spl mu/m operate with a threshold of 20 mA and external differential quantum efficiency of 15.5%/facet at a wavelength of 820 nm, InGaN-GaN LED's, fabricated 75 /spl mu/m from the lasers, emit at 458 nm. The operation of the lasers and LED's fused to GaN demonstrates that the fused interface is mechanically robust, and the properties of fused heterostructures are not adversely affected by the fusion process.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 11 )

Date of Publication:

Nov. 1998

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