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Multiplexed antenna monitoring test structure [plasma charging damage]

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4 Author(s)
Simon, P.L.C. ; Philips Semicond., Nijmegen, Netherlands ; Maly, W. ; Luchies, J.R.M. ; Antheunis, R.

A new test structure for measuring charging damage in CMOS transistors has been proposed, fabricated and tested successfully. With this structure, the threshold voltage shift and gate leakage of large numbers of transistors are measured while minimizing measuring time and silicon area overhead for probing pads. The large number of transistors and the large variety of antennas make the structure suitable for detailed study of various charging effects or for monitoring charging in mass IC production

Published in:

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Date of Conference:

4-5 Jun 1998