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Impact of etcher chamber design on plasma induced device damage for advanced oxide etching

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7 Author(s)
Tao, H.J. ; Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan ; Tsai, C.S. ; Lin, B.L. ; Su, C.W.
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The effect of oxide etcher chamber design on plasma induced damage is investigated by antenna test structures associated with optical emission spectroscopy. It is found that the magnetically-enhanced RIE (MERIE) type etcher may have less plasma damage than inductive type etchers under certain conditions. The experimental data also suggests that the chamber design for a high density plasma etcher has a significant impact on the plasma induced damage and the damage level can be minimized by choosing a different etching chemistry. From the spectroscopic data, we also conclude that plasma induced UV radiation has an insignificant contribution compared to charging damage

Published in:

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Date of Conference:

4-5 Jun 1998