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Stress-induced leakage current due to charging damage: gate oxide thickness and gate poly-Si etching condition dependence

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6 Author(s)
Donggun Park ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Kennard, M. ; Melaku, Yosias ; Benjamin, Neil
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Stress-induced gate leakage current (SILC) was used to evaluate plasma process-induced damage to ultra-thin gate oxide transistors. Even though the leakage currents increase as the oxide thickness decreases, the reliability of ultra-thin gate oxide (2.2 nm) is superior to the thicker oxides. No SILC was observed for the thinnest films, while thicker oxides show large SILC variation due to process-induced charging damage. The effect of different gate poly-Si etching processes in a high density TCP (transformer-coupled plasma) system were also evaluated. Only the gate that was etched with an abnormally high bias power overetch process, and connected to large connection ratio antenna shows SILC

Published in:

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Date of Conference:

4-5 Jun 1998

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