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Reliability characterization of process charging impact on thin gate oxide

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5 Author(s)
Y. -H. Lee ; Intel Corp., Santa Clara, CA, USA ; K. Wu ; G. Sery ; N. Miekle
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Process charging effects in sub-micron p- and nMOSFETs with 32 Å oxide are investigated using gate current, stepping JT, ramp voltage, hot carrier and bias-temperature stress techniques. A failure criterion for determination of proper gate oxide reliability is proposed

Published in:

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Date of Conference:

4-5 Jun 1998