Referenced Items are not available for this document.
A model to describe the dependence of the gate current with source-to-drain voltage was developed and used to predict the performance of AlGaAs/InGaAs/GaAs HFETs. Our model describes the charge injection transistor (CHINT) regime of operation and account for real-space electron transport. In this model, the saturation of the hot-electron gate current is explained by the rapid drop in the energy relaxation time caused by the real-space transfer of electrons. Good correlation between the experimental and theoretical data was found for temperatures ranging from 198 to 398 K. Our experimental and theoretical results should be accounted for in the design of HFET devices and integrated circuits
Published in:
Electron Devices, IEEE Transactions on
(Volume:45
,
Issue:
10
)
Date of Publication: Oct 1998
- Page(s):
- 2108 - 2115
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6057840
- Digital Object Identifier :
- 10.1109/16.725243
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 1998
- Sponsored by :
- IEEE Electron Devices Society
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