Cart (Loading....) | Create Account
Close category search window

A low thermal budget salicide with germanium large angle tilt implant and preamorphization to improve the performance of thin film SOI MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hsiao, T.C. ; Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA ; Liu, P. ; Woo, J.C.S.

Two of the most serious issues for thin film SOI CMOS are the high source/drain series resistance and the floating body effect. In the past, we have demonstrated that a Ge preamorphization can be used to control the salicide depth. It suppresses void formation, which often occurs in conventional thin film SOI silicide processes, and reduces the floating body effect (Hsiao et al., 1997). More recently, we proposed a Ge large angle tilt implant (LATI) as an approach to further reduce the floating body effect (Hsiao et al., 1997). In this paper, we present an optimized low thermal budget salicide process and detailed characterization of SOI devices with Ge LATI.

Published in:

SOI Conference, 1998. Proceedings., 1998 IEEE International

Date of Conference:

5-8 Oct. 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.