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40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs

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6 Author(s)
Amamiya, Y. ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan ; Niwa, T. ; Nagano, N. ; Mamada, M.
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This paper reports low power dissipation 40-GHz frequency dividers fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R/sub E/. An f/sub T/ of above 110 GHz and an f/sub max/ of 250 GHz were achieved with a small emitter area of 2.8 /spl mu/m/sup 2/. A frequency divider fabricated using these high-speed small-emitter-area HBTs operated at 40 GHz with an output voltage of 0.6 V/sub P-P/ and a low power dissipation of 0.9 W. The power dissipation is reduced by 43% compared with that for a frequency divider using conventional size HBTs.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Date of Conference:

1-4 Nov. 1998