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High performance 0.25 μm p-type Ge-SiGe MODFETs

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5 Author(s)
Hock, G. ; Dept. of Electron Devices & Ciruits, Ulm Univ., Germany ; Hackbarth, T. ; Erben, U. ; Kohn, E.
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The authors report the fabrication and characterisation of 0.25 μm gate length p-type Ge channel modulation doped field effect transistors (MODFETs) with improved RF performance. The structure consists of a compressively strained pure Ge hole channel, grown on a relaxed 5 μm thick graded Si0.4Ge0.6 buffer. A room temperature hole mobility of 1870 cm2/Vs and a sheet carrier density of 2.1×1012 cm-2 were measured. The devices exhibit DC transconductances up to 160 mS/mm and saturation currents up to 300 mA/mm. Cutoff frequencies of fT=32 GHz and fmax=85 GHz have been achieved

Published in:

Electronics Letters  (Volume:34 ,  Issue: 19 )

Date of Publication:

17 Sep 1998

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