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Formation of ultrathin gate oxides with low-dose nitrogen implantation into Si substrates

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2 Author(s)
Bark, J.O. ; Fab Oper., Anan Semicond., Kyunggi, South Korea ; Kim, S.W.

Ultrathin gate oxides (23-40 Å) have been grown on nitrogen implanted Si substrates with doses ranging from 9×1012 to 5×1014/cm2 at 850°C in dry O2 ambient for 18 min 50 s. The controlled growth of ultrathin gate oxides is achieved by performing the post-implant RTA after the pad oxide removal

Published in:

Electronics Letters  (Volume:34 ,  Issue: 19 )