Referenced Items are not available for this document.
The authors report a novel contact design and technology for heterojunction bipolar transistors. The design consists of a base (B)-emitter (E)-collector (C) configuration with a T-shaped base. This configuration enables coplanar access to the emitter from both ground lines without air-bridge crossings. This leads to a very fast HBT fabrication procedure consisting of a double self-alignment process and only two metallisation steps
Published in:
Electronics Letters
(Volume:34
,
Issue:
19
)
Date of Publication: 17 Sep 1998
- Page(s):
- 1885 - 1886
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6056956
- Digital Object Identifier :
- 10.1049/el:19981295
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 17 Sep 1998
- Sponsored by :
- Institution of Engineering and Technology
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