By Topic

Design of radiating K-band HEMT oscillators by means of moment-method approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kaleja, M.M. ; Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany ; Biebl, E.M.

This paper discusses the design of radiating K-band oscillators with high electron-mobility transistors (HEMTs) as active devices. In order to allow monolithic integration, the design Is based on a uniplanar microstrip configuration, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. In this configuration, feeding of the microstrip lines is incompatible to the fundamental quasi-TEM microstrip mode. Moreover, the radiation losses of these so-called active antennas significantly influence the oscillation condition. Thus, modeling of the passive circuit by means of a full-wave analysis is mandatory. In this paper, we show how a full-wave analysis of the passive circuit can be combined with well-known network-based oscillator design methods using commercially available design tools. By using a moment-method approach for the passive structure and small signal model for the active device, all relevant electromagnetic effects like losses, coupling and radiation, are included, allowing a very precise prediction of the operation frequency

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 10 )