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Improved HEMT model for low phase-noise InP-based MMIC oscillators

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6 Author(s)
Schreurs, D. ; ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium ; van Meer, H. ; van der Zanden, K. ; De Raedt, W.
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This paper focuses on two modeling aspects to improve the accuracy of low phase-noise monolithic-microwave integrated-circuit (MMIC) oscillator design. Up until now, the modeling of InP-based high electron mobility transistors (HEMTs) has mainly been limited to the representation of small-signal and thermal noise behavior. In this paper, we present a scaleable nonlinear and bias-dependent low-frequency (LF) noise model

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 10 )

Date of Publication:

Oct 1998

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