Improved HEMT model for low phase-noise InP-based MMIC oscillators

This paper focuses on two modeling aspects to improve the accuracy of low phase-noise monolithic-microwave integrated-circuit (MMIC) oscillator design. Up until now, the modeling of InP-based high electron mobility transistors (HEMTs) has mainly been limited to the representation of small-signal and thermal noise behavior. In this paper, we present a scaleable nonlinear and bias-dependent low-frequency (LF) noise model.