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Improved HEMT model for low phase-noise InP-based MMIC oscillators

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6 Author(s)
D. Schreurs ; ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium ; H. van Meer ; K. van der Zanden ; W. De Raedt
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This paper focuses on two modeling aspects to improve the accuracy of low phase-noise monolithic-microwave integrated-circuit (MMIC) oscillator design. Up until now, the modeling of InP-based high electron mobility transistors (HEMTs) has mainly been limited to the representation of small-signal and thermal noise behavior. In this paper, we present a scaleable nonlinear and bias-dependent low-frequency (LF) noise model

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IEEE Transactions on Microwave Theory and Techniques  (Volume:46 ,  Issue: 10 )