Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Numerical simulation of an ion-implanted GaAs OPFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chakrabarti, P. ; Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India ; Madheswaran, M. ; Gupta, A. ; Khan, N.A.

A numerical model of an ion-implanted GaAs optical field-effect transistor (OPFET) has been presented. The model is a physics-based one, and overcomes the major limitations of the existing models by considering both the photoconductive effect in the channel and photovoltaic effect at the gate Schottky barrier as well as the channel-substrate barrier. The exact potential profile in the channel and variation of gate depletion width and substrate depletion width in the channel as a function of position between source and drain have been computed for the first time for a nonuniformly doped channel. The model can be used to obtain the drain-current-drain-voltage characteristics, transfer characteristics, transconductance and gate-to-source capacitance of the device under dark and illuminated conditions. The model can be used as a basic tool for accurate simulation of optoelectronic integrated circuits (OEICs) using an OPFET

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 10 )