By Topic

The time evolution of interdiffusion in multiple quantum wells: a new model of impurity-induced compositional intermixing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gass, R.G. ; Dept. of Phys., Cincinnati Univ., OH, USA ; Jackson, Howard E.

A new model for impurity-induced compositional interdiffusion which depends explicitly on the time evolution of the impurity-induced vacancy spatial profile is explored. The inclusion of a new phenomenological term depending on the time derivative of the vacancy spatial profile provides a time scale, as well as a depth profile of the resulting interdiffusion. Calculations are presented as a function of time for a variety of vacancy concentrations and contrasted to the calculations using the model of Kahen, Rajeswaren, and Lee. Our model generates good agreement with a range of experiments including Si-focused ion beam implantation experiments in AlGaAs multiple quantum wells

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 4 )