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Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

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4 Author(s)
Si, Sang Kee ; Sch. of Electr. Eng., Seoul Nat. Univ., South Korea ; Deok Ho Yeo ; Hyung Hun Yoon ; Sung June Kim

Area selectivity of bandgap tuning in the InGaAsP-InP multiquantum-well structure has been investigated using low temperature photoluminescence (PL). The bandgap blue-shift in the intermixed region was as much as 170 meV for a rapid thermal anneal of 30 s at 850°C, and was controllable using annealing temperature and time. From samples with SiO2 stripe patterns, clearly separated PL peaks were observed centered at 0.95 and 1.08 eV, each representing signals originating from the dielectric capped and exposed areas, respectively. In samples with stripes intervals less than 6 μm, PL signals did not separate, but formed one broad spectrum due to lateral diffusion. The lateral diffusion was found less than 3.0 μm

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 4 )