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Performance and Vdd scaling in deep submicrometer CMOS

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2 Author(s)
Kai Chen ; R&D Center, IBM Corp., Hopewell Junction, NY, USA ; Chenming Hu

Analytical models on metal-oxide-semiconductor field-effect transistor (MOSFET) scaling and complementary (CMOS) ring oscillator performance developed recently are applied to revisit CMOS design guidelines because those based on the basic long channel model are obsolete. Handy and empirical equations for deep submicrometer MOSFET drain saturation current are developed. The differences between the basic long channel model and the accurate deep submicrometer MOSFET current model are highlighted. Design guidelines on Vth and V dd scaling as well as interconnect loading effects based on the accurate models are presented

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Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 10 )