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An MOS transistor model for analog circuit design

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3 Author(s)
Cunha, A.I.A. ; Univ. Fed. da Bahia, Salvador, Brazil ; Schneider, M.C. ; Galup-Montoro, C.

This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 10 )