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1.5-μm tapered-gain-region lasers with high-CW output powers

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8 Author(s)
Donnelly, J.P. ; Lincoln Lab., MIT, Lexington, MA, USA ; Walpole, J.N. ; Groves, S.H. ; Bailey, R.J.
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High-power diode lasers consisting of a a tapered region have waveguide section coupled to fabricated in 1.5-μm InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers of >1 W with /spl ap/80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 10 )