Cart (Loading....) | Create Account
Close category search window
 

1.5-μm tapered-gain-region lasers with high-CW output powers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Donnelly, J.P. ; Lincoln Lab., MIT, Lexington, MA, USA ; Walpole, J.N. ; Groves, S.H. ; Bailey, R.J.
more authors

High-power diode lasers consisting of a a tapered region have waveguide section coupled to fabricated in 1.5-/spl mu/m InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers of >1 W with /spl ap/80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 10 )

Date of Publication:

Oct. 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.