By Topic

Gradual degradation in 850-nm vertical-cavity surface-emitting lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Herrick, Robert W. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Petroff, Pierre M.

The aging process is studied in proton-implanted 850-nm vertical-cavity surface-emitting lasers (VCSEL's). We find evidence for a novel failure mode, which does not involve the growth of defects or reduction in radiative efficiency. In the proposed failure mode, point defects migrate and passivate the dopant atoms in the VCSEL mirrors, increasing mirror resistance in the device center. Thus, current is forced toward the lower resistance parallel path along the device edges, where it does not contribute to lasing. We refer to this as the “current-shunting failure mechanism”. Evidence has been found to support this process for both 850- and 680-nm proton-implanted VCSEL's

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 10 )