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Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy

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3 Author(s)
Jyh-Shyang Wang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lin, Hao-Hsiung ; Li-Wei Sung

We report the fabrication and performances of 2.2-μm InAs-InGaAs-InP highly strained multiple-quantum-well (MQW) lasers grown by gas-source molecular beam epitaxy. The lasers operated at room temperature demonstrate a threshold current density of 900 A/cm2 a maximum external quantum efficiency of 28%, and a maximum output power exceeding 60 mW per facet. To the best of our knowledge, this is the longest room-temperature emission wavelength reported for lasers grown on InP substrates to date. The effect of strain compensation on the quality of the InAs-InxGa1-xAs MQW's was also studied using double crystal X-ray diffractometry and photoluminescence techniques. The experimental results reveal that there is no significant difference on the epilayer quality of the samples with strain compensation. However, the group V stable surface growth condition is indeed better than the group III stable surface growth condition on the epilayer quality

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 10 )

Date of Publication:

Oct 1998

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