Referenced Items are not available for this document.
We have analyzed the lateral mode behavior of 980 nm InGaAs-AlGaAs lasers, where the waveguiding is carried out by oxidized AlAs layers beside a current aperture. The effective refractive-index step between the active and oxidized region has been calculated. We have found that the effective refractive-index step can be adjusted exactly by the thickness of the AlAs layer and its distance to the graded-index separate-confinement heterostructure region. We have compared this native-oxide-confined laser to a standard ridge-waveguide laser with respect to the lateral index step. Furthermore, we suggest a structure for a lateral separate confinement of carriers and optical waves. Experimental results are presented which are in good agreement with the numerical simulations
Published in:
Quantum Electronics, IEEE Journal of
(Volume:34
,
Issue:
10
)
Date of Publication: Oct 1998
- Page(s):
- 1953 - 1958
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 6050442
- Digital Object Identifier :
- 10.1109/3.720232
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 1998
- Sponsored by :
- IEEE Photonics Society
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