By Topic

Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
D. Hofstetter ; Xerox Palo Alto Res. Center, CA, USA ; R. L. Thornton

We present several observations on a novel method for the evaluation of the internal loss properties in semiconductor lasers. The method we use involves Fourier analysis of the Fabry-Perot mode spectrum when operating the device below lasing threshold. The observation of various structural features in the Fourier transform domain allows us to extract important information on the laser cavity. As one example, the amount of cavity propagation loss/gain, or net gain, can be derived from the decay rate of harmonics of the Fourier spectrum. A comparison between experimental and calculated gain versus wavelength data for lasers fabricated in the AlGaAs, AlGaInP, and AlGaInN material systems is given. As a second example, this method also allows the identification of the density and strength of intracavity scattering centers. This is an important capability for the fabrication of blue diode lasers in the gallium-nitride material system

Published in:

IEEE Journal of Quantum Electronics  (Volume:34 ,  Issue: 10 )