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Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion

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5 Author(s)
Y. Ohiso ; NTT Opto-Electron. Labs., Kanagawa, Japan ; C. Amano ; Y. Itoh ; H. Takenouchi
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We propose a novel design for a 1.55-μm vertical-cavity surface-emitting laser (VCSEL) structure employing double InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. The fundamental features of InP/GaAs wafer fusion are examined as a function of load pressure. We demonstrate an exact 1.55-μm emission wavelength in the CW mode with low threshold voltage (2.1 V) and low threshold current density (1.8 kA/cm2)

Published in:

IEEE Journal of Quantum Electronics  (Volume:34 ,  Issue: 10 )