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InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

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5 Author(s)
Jelen, C. ; Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA ; Slivken, S. ; Guzman, V. ; Razeghi, M.
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We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively, a 45° facet coupled illumination responsivity of R=0.37 μm and detectivity of Dλ*=3×108 cm·√(Hz)· at T=77 K, for a cutoff wavelength λc=13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27 As-InP heterojunctions

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Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 10 )