By Topic

Terahertz detector utilizing two-dimensional electronic fluid

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jian-Qiang Lu ; Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA ; M. S. Shur ; J. L. Hesler ; Liangquan Sun
more authors

We report on the first implementation of a terahertz detector utilizing two-dimensional (2-D) electronic fluid in a high electron mobility transistor (HEMT) operating at 2.5 THz. The terahertz radiation induced a dc drain-to-source voltage proportional to the radiation intensity. The measured dependencies of the detector responsivity on the gate bias are in good agreement with the gate bias dependence of the normalized responsivity predicted by the detector theory. This result shows the potential for developing a new family of electronics devices-plasma wave electronics devices-operating at terahertz frequencies.

Published in:

IEEE Electron Device Letters  (Volume:19 ,  Issue: 10 )