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Three-dimensional semiconductor device simulation by finite element method coupled to Monte Carlo method

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3 Author(s)
Hadji, D. ; LEG, ENSIEG/INPG, St. Martin d''Heres, France ; Marechal, Y. ; Zimmermann, J.

A three-dimensional simulation of sub micron semiconductor devices is presented. The device simulations are based on the solution of the basic semiconductor equations, composed of the Poisson equation coupled with the steady-state carrier continuity equations. The Finite Element method is used for solving an electrostatic problem (the Poisson equation), and the Monte Carlo method is used for solving the carrier transport equation. Some numerical results obtained by this approach are reported. Our primary interest is the study of small size devices. However, our simulation process call be easily transformed and generalised to other types of devices

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Magnetics, IEEE Transactions on  (Volume:34 ,  Issue: 5 )