Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate

This paper investigated the simulation model for NO
₂
-exposed H-terminated diamond FETs with Al
₂
O
₃
insulator gate, which have very good DC/RF characteristics and thermally stable operation. The NO
₂
adsorption and H terminated layer were replaced to fixed charges at the interface between the Al
₂
O
₃
insulator and diamond. The simulation results agreed qualitatively with the experimental data. The formation of the two dimensional hole gas at on-state was confirmed at on-state. Moreover, drain current response was calculated for sinusoidal input of the gate electrode.