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40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

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10 Author(s)
Yoshino, K. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Wakita, K. ; Kotaka, I. ; Kondo, S.
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4O-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/lnAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V/sub pp/.

Published in:

Optical Communication, 1996. ECOC '96. 22nd European Conference on  (Volume:3 )

Date of Conference:

19-19 Sept. 1996