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Investigation of the reliability of Unibond and SIMOX N-MOSFETs using charge pumping and noise techniques

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4 Author(s)
Shing-Hwa Renn ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; J. Jomaah ; C. Raynaud ; F. Balestra

Hot-carrier-induced device degradation is thoroughly investigated with various methods for deep submicron fully-depleted Unibond and SIMOX N-MOSFETs. A comparison of the variation of device electric parameters measured in the linear region is proposed. The charge pumping and noise measurements are also performed for studying the device damage at the Si-SiO2 interface and in the gate oxide, respectively. Unibond devices are found to exhibit a much better hot-carrier immunity than SIMOX devices

Published in:

Electronics Letters  (Volume:34 ,  Issue: 18 )