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30°C CW operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers with in situ built-in lateral current confinement by localised fusion

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13 Author(s)
Syrbu, A.V. ; Fed. Inst. of Technol., Lausanne, Switzerland ; Iakovlev, V.P. ; Berseth, C.-A. ; Dehaese, O.
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1.52 μm double fused InGaAsP/AlGaAs vertical cavity surface emitting lasers with in situ built-in lateral current confinement were fabricated using a localised wafer fusion process. A threshold current of 2.5 mA at 4 V was obtained for devices with a 10×10 μm2 current aperture. These devices operate CW up to 30°C. The width of the dominant mode is less than 0.1 nm and the sidemode suppression ratio is 30 dB

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Electronics Letters  (Volume:34 ,  Issue: 18 )