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Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates

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4 Author(s)
Dyakonova, N. ; Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA ; Dickens, A. ; Shur, M.S. ; Gaska, R.

The authors report on the impact ionisation in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire substrates. The measured characteristic electric field of the impact ionisation is ~2.8-3.15 MV/cm at room temperature. This result is in good agreement with the theoretical predictions for the breakdown field in GaN and with recent results for AlGaN-GaN HFETs on 6H-SiC substrates

Published in:

Electronics Letters  (Volume:34 ,  Issue: 17 )

Date of Publication:

20 Aug 1998

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