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Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes

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4 Author(s)
Lin, Chia-Chien ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Kuo-Shung Liu ; Meng-Chyi Wu ; Hung-Pin Shiao

Low threshold current and high temperature operation is achieved in a 1.55 μm graded-index separate-confinement heterostructure and strained multi-quantum well AlInAs/AlGaInAs laser diode which was fabricated from epitaxial wafers grown by low-pressure organometallic vapour phase epitaxy. Remarkable improvements in threshold current, operating temperature and characteristic temperature have been demonstrated. The threshold current is 7 mA at 20°C, the emission wavelength is 1.5542 μm and the characteristic temperature between 20 and 70°C is 84 K

Published in:

Electronics Letters  (Volume:34 ,  Issue: 17 )