Cart (Loading....) | Create Account
Close category search window

Status of device-qualified GaAs substrate technology for GaAs integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Thomas, R.N. ; Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA ; McGuigan, S. ; Eldridge, G.W. ; Barrett, D.L.

A review is presented of the current technical status of large-diameter GaAs crystal growth, the effects of residual impurities, stoichiometric defects and crystalline imperfections on the electrical properties of undoped semi-insulating GaAs, and the effectiveness of Group III and V isovalent, lattice-hardening dopants in yielding dislocation-free, semi-insulating GaAs crystals. Factors related to crystal growth, postgrowth annealing, and the preparation of ultraflat, damage-free GaAs wafers, which can significantly improve the performance and yields of directly implanted devices and monolithic circuits are discussed.<>

Published in:

Proceedings of the IEEE  (Volume:76 ,  Issue: 7 )

Date of Publication:

July 1988

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.