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Status of device-qualified GaAs substrate technology for GaAs integrated circuits

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4 Author(s)
Thomas, R.N. ; Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA ; McGuigan, S. ; Eldridge, G.W. ; Barrett, D.L.

A review is presented of the current technical status of large-diameter GaAs crystal growth, the effects of residual impurities, stoichiometric defects and crystalline imperfections on the electrical properties of undoped semi-insulating GaAs, and the effectiveness of Group III and V isovalent, lattice-hardening dopants in yielding dislocation-free, semi-insulating GaAs crystals. Factors related to crystal growth, postgrowth annealing, and the preparation of ultraflat, damage-free GaAs wafers, which can significantly improve the performance and yields of directly implanted devices and monolithic circuits are discussed.<>

Published in:

Proceedings of the IEEE  (Volume:76 ,  Issue: 7 )

Date of Publication:

July 1988

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