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Size-controlled decananometer InGaAs quantum wires grown by selective MBE on InP

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5 Author(s)
Muranaka, T. ; Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan ; Okada, Hiroshi ; Hanada, Y. ; Fujikura, Hajime
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The purpose of the present paper is to investigate the controllability of the wire size for the newly developed selective molecular beam epitaxial (MBE) growth process of the InGaAs ridge quantum wires formed on mesa-patterned InP substrates. For this, detailed scanning electron microscope (SEM), photoluminescence (PL) and magnetoresistance observations were made. All of these measurements revealed that the InGaAs ridge quantum wires having widths in a decananometer range can be successfully formed in a size-controlled fashion. These wires showed good PL and transport properties. Nonlinear Landau plots of Shubnikov-de Haas (SdH) oscillations were observed in the present wires with the decananometer widths, indicating achievement of large subband spacing values, hω0, more than 10 meV

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998

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