By Topic

Influence of thermal stress on I-V characteristics and low-frequency noise of AlGaInP UHB-LEDs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Berntgen, J. ; Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany ; Lieske, T. ; Schineller, B. ; Deufel, M.
more authors

Light emitting AlGaInP double heterostructures were exposed to thermal stress at 670 K in order to investigate the influence of aging processes on the I-V characteristics and the low frequency noise. The results reveal a strong dependence of the degradation mechanisms on the operating current. UHB-LEDs, which were only thermally stressed for 9 h, showed nearly no degeneration of the device performance. These thermally stressed diodes can be described by a simple series combination of an ideal light emitting diode and a series resistance during the whole stress duration. In contrast to this, the samples thermally stressed during operation at 20 mA degenerated abruptly after more than 4 h. For the explanation of the I-V dependence on the stress during operation a model was developed. Due to the applied electric field in combination with heat, dark-regions were generated. The development of these non radiating zones is associated with dislocations because of the directional diffusion of dopants into lattice interstitials and strain at the hetero-interfaces. After 9 h, the samples stressed during operation did not emit light up to currents of 100 mA. Furthermore, the low frequency noise spectroscopy proofed itself to be a very sensitive diagnostic tool for detection of aging processes

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998