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Low threshold 1.3 μm InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy

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7 Author(s)
H. Shimizu ; Furukawa Electr. Co. Ltd., Yokohama, Japan ; K. Kumada ; N. Yamanaka ; N. Iwai
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We investigated the effect of n-type modulation doping as well as growth temperature on the threshold current density of 1.3 μm InAsP strained MQW lasers grown by gas-source MBE (GSMBE) for the first time and have obtained threshold current density as low as 250 A/cm2 for 1200 μm long devices

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998