By Topic

Very low threshold current density 1.3 μm-InAsP/InGaAsP strained quantum well GRINSCH lasers grown by gas source MBE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chung, H.Y.A. ; Dept. of Optoelectron., Ulm Univ., Germany ; Stareev, G. ; Joos, J. ; Maehnss, J.
more authors

We report the successful fabrication of the first Gas Source MBE grown InAsP/InGaAsP single and multiquantum well lasers with linearly graded InGaAsP confinement layers. The optical quality of the InAsP/InGaAsP quantum wells (QWs) are investigated by room temperature Photoluminescence (PL) spectroscopy; Intense PL-signal with small FWHM is observed in structures containing five, three and one quantum well indicating that our structures are of high optical quality. Laser structures containing graded confinement layers and various numbers of quantum wells are grown and fabricated into broad-area laser diodes. Threshold current densities of 400 A/cm2 270 A/cm2 and 180 A/cm2 are obtained for 1.2 mm long lasers containing five, three and single quantum well, respectively. These values are among the lowest ever achieved for 1.3 μm lasers grown by any kind of MBE

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998