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High performance buried heterostructure 1.55 μm wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique

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8 Author(s)
Tanbun-ek, T. ; Lucent Technol. Inc., Murray Hill, NJ, USA ; Chu, S.N.G. ; Wisk, P.W. ; Pawelek, R.
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The fabrication and characterization of a high quality buried heterostructure (BH) type 1.55 μm wavelength strained AlGaInAs/InP MQW laser is reported. The lasers have low threshold current density (600 A/cm2) for compressively strained MQW measured from a BH chip with cavity lengths of 545 μm and 1.5 μm wide. Low threshold current of less than 10 mA (2 mA with HR facets coated) is obtained. The differential modal gain of the AlGaInAs devices was also found to be superior to that of the conventional strained GaInAsP system

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998