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Fabrication of InGaAs quantum-wire field-effect transistor by selective growth in molecular beam epitaxy

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4 Author(s)
Sugaya, T. ; Electrotech. Lab., Tsukuba, Japan ; Takahashi, T. ; Nakagawa, T. ; Ogura, Mutsuo

Field effect transistor (FET) using single InGaAs quasi-quantum-wire (quasi-QWR) as a channel has been fabricated. The quasi-QWR structures with good optical property have been fabricated by selective growth using of molecular beam epitaxy on non-planar InP substrate. The width and the thickness of the quasi-QWR are 200 nm and 7 nm, respectively. The InGaAs quasi-QWR is used as a channel of the FET. The FET demonstrated the good saturation characteristics and its maximum transconductance (gm) is 105 mS/mm at the drain voltage of 0.6 V

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998

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