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Effects of thermal annealing on InAsP/GaInP strain-compensated multiple quantum wells

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3 Author(s)
Mei, X.B. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Tu, C.W. ; Jones, E.D.

In this paper, we investigate the effects of annealing on 30-period strain-compensated InAs0.41P0.59/Ga0.13In0.87P MQWs annealed at different temperatures up to 630°C for 30 minutes. High resolution X-ray rocking curves show no difference between as-grown and annealed samples. The room-temperature photo-luminescence (PL) intensity increases with increasing annealing temperature up to 570°C and then decreases. PL at 4 K shows that a new peak appears on the lower-energy side of the exciton peak. The power- and temperature-dependence of the PL suggests that it be reasonable to attribute the new peak to some defect-related transitions. These defects do not affect the absorption properties, however, photocurrent measurements of the as-grown and the 600°C-annealed samples show that there is no observable difference between the electroabsorption properties of these samples

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998