Referenced Items are not available for this document.
This paper proposes and experimentally evaluates a novel oxide-free InP MIS structure having an ultra-narrow silicon surface quantum well. A theoretical calculation showed that the structure becomes free of gap states for silicon layer thicknesses below 5 Å. Experimentally, an ultra-narrow silicon surface quantum well was realized by direct nitridation of MBE Si layer by ECR N2 plasma and its detailed XPS analysis. A stable MIS structure with Nssmin=2×1010 cm-2 eV-1 was successfully realized
Published in:
Indium Phosphide and Related Materials, 1998 International Conference on
Date of Conference: 11-15 May 1998
- Page(s):
- 463 - 466
- Meeting Date :
- 11 May 1998-15 May 1998
- ISSN :
- 1092-8669
- Print ISBN:
- 0-7803-4220-8
- INSPEC Accession Number:
- 6181234
- Conference Location :
- Tsukuba
- Digital Object Identifier :
- 10.1109/ICIPRM.1998.712525
- Product Type:
- Conference Publications
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