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20 gbit/s modulation of 1.55 μm compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy

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14 Author(s)
Kiefer, R. ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany ; Losch, R. ; Walcher, H. ; Walther, M.
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We describe the realization of 1.55 μm InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP cladding layers grown by molecular beam epitaxy with solid sources (SSMBE) and valved cracker cells for phosphorus and arsenic. For lasers with 10 QWs, a threshold current density per quantum well of 150 Acm-2 was extrapolated for infinitely long cavities. 4×200 μm2 devices exhibit a T0-value of 85 K in the temperature range from 20 to 85°C and showed a maximum 3 dB modulation bandwidth of 16.5 GHz, capable of 20 Gbit/s NRZ large signal modulation with an extinction ratio of 6 dB. These results compare well with MQW lasers grown by MOCVD

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998

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