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Narrow-stripe selective MOVPE for high-quality InGaAsP MQWS and its application to photonic integrated circuits

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2 Author(s)
Sasaki, T. ; Optoelectron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan ; Yamaguchi, M.

The recent advances in optical-fiber communication systems have required various high performance photonic components with high yield. Our approach using a narrow-stripe selective MOVPE technique has significant advantages because of its direct waveguide formation and bandgap energy control capabilities. After optimizing growth conditions, we obtained high-quality InGaAsP MQWs with comparable optical properties to that on an unmasked wafer. Excellent device characteristics and high device uniformity are also confirmed for laser diodes on a 2-inch InP wafer. Spot-size converter integrated laser diodes are also successfully fabricated, which can be used to achieve a low-cost transmitter module. Because of high structural uniformity, we obtained a fine lasing wavelength distribution for 40-channel electroabsorption modulator integrated DFB laser diodes. These integrated devices were fabricated by a process comparable to that for single-wavelength laser diodes. This direct waveguide formation process is an efficient fabrication tool for manufacturing various photonic components

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998