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Room temperature cw operation in GaInAsP/InP microdisk laser with record low threshold of 150 μA

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3 Author(s)
M. Fujita ; Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan ; K. Inoshita ; T. Baba

We have achieved the cw lasing operation in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 μA was obtained for the lasing wavelength of 1.63 μm. It was mainly due to the reduction of scattering loss at the disk edge and that of threshold current density

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998