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Growth of atomically smooth ultra-thin InSb layers on GaAs substrates by molecular beam epitaxy

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3 Author(s)
Kanisawa, K. ; NTT Basic Res. Labs., Kanagawa, Japan ; Yamaguchi, H. ; Hirayama, Y.

We successfully grew an atomically smooth 14.6% lattice-mismatched InSb layer on GaAs substrates under the Frank-van der Merwe (F-vdM) mode from the beginning of molecular beam epitaxy (MBE) by eliminating excess Sb adsorption. It is confirmed that the use of a (111)A substrate and an In template layer has an advantage in the enhancement of layer-by-layer InSb growth on a GaAs substrate. Characterization with scanning tunneling microscopy (STM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) clarified that we achieved a 1 nm height difference per 1 μm2 area, which is comparable to that of a homoepitaxially grown GaAs surface

Published in:

Indium Phosphide and Related Materials, 1998 International Conference on

Date of Conference:

11-15 May 1998